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The theoretical Dielectric strength of a material is an intrinsic property of the bulk material and is dependent on the configuration of the material or the electrodes with which the field is applied. At breakdown, the electric field frees bound electrons. If the applied electric field is sufficiently high, free electrons may become accelerated to velocities that can liberate additional electrons during collisions with neutral atoms or molecules in a process called Avalanche Breakdown . Breakdown occurs quite abruptly (typically in Nanoseconds )., resulting in the formation of an electrically conductive path and a Disruptive Discharge through the material. For solid materials, a breakdown event severely degrades, or even destroys, its insulating capability. BREAKDOWN FIELD STRENGTH The field strength at which breakdown occurs in a given case is dependent on the respective geometries of the dielectric (insulator) and the electrodes with which the electric field is applied, as well as the rate of increase at which the Electric Field is applied. Because dielectric materials usually contain minute defects, the practical dielectric strength will be a fraction of the intrinsic dielectric strength seen for ideal, defect free, material. Dielectric films tend to exhibit greater dielectric strength than thicker samples of the same material. For instance, dielectric strength of silicon dioxide films of a few hundred nm to a few micrometres thick is approximately 10 MV/cm. Multiple layers of thin dielectric films are used where maximum practical dielectric strength is required, such as high voltage Capacitor s and pulse Transformer s. SEE ALSO EXTERNAL LINKS
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