| Metal-oxide-semiconductor Structure |
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Information AboutMetal-oxide-semiconductor Structure |
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When a voltage is applied across a MOS structure, it modifies the distribution of charges in the semiconductor. If we consider a P-type semiconductor (with the density of holes), a positive (see figure) tends to reduce the concentration of holes and increase the concentration of electrons. If is high enough, the concentration of negative charge carriers is more than that of positive charges. OPERATING PRINCIPLE Flat-Band conditions Accumulation Depletion Inversion NON-IDEALITIES APPLICATIONS REFERENCES AND NOTES |
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