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The bandgap of InN has now been established to be between 0.7 and 0.65 eV depending on temperature. The effective Electron Mass is between 0.04 and 0.07 m0. Electron Mobility as high as >2000cm2.V-1.s-1 has been reported. Alloyed with GaN , the ternary system InGaN has a direct bandgap span from the Infrared (0.7eV) to the Ultraviolet (3.4eV). Currently there is research into developing solar cells using the Nitride based Semiconductor s. Using the alloy Indium Gallium Nitride , an optical match to the Solar Spectrum is obtained. The Bandgap of InN allows a Wavelength s as long as 1900 Nm to be utilized. However, there are many difficulties to be overcome if such solar cells are to become a commercial reality. p-type doping of InN and In-rich InGaN is one of the biggest challenges. Heteroepitaxial growth of InN with other nitrides (GaN, AlN) has proved to be difficult. SEE ALSO EXTERNAL LINKS
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