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Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Indium antimonide is a crystalline Compound made from the Element s Indium and Antimony . It has the appearance of dark grey silvery metal pieces or powder with vitreous lustre. When subjected to temperatures over 500 °C, it melts and decomposes, liberating antimony and Antimony Oxide vapors. Its CAS Number is . Its safety and risk phrases are . Indium antimonide and PtSi are materials with similar use. A layer of indium antimonide sandwiched between layers of s operating at frequencies up to 85 GHz were constructed from indium antimonide in the late 1990s. Field Effect Transistors operating at over 200 GHz have been reported more recently ( Intel / QinetiQ ). Some models suggest Terahertz frequencies are achievable with this material. Indium antimonide semiconductors are also capable of operating with voltages under 0.5 V, reducing their power requirements. {Link without Title} HISTORY InSb crystals have been grown by slow cooling from a liquid melt at least since 1954 . PHYSICS It is a narrow gap Semiconductor with an energy Band Gap equal to 0.17 EV at 300 K and 0.23 eV at 80 K. The Crystal Structure is cubic with a 0.648 Nm Lattice Constant . The undoped semiconductor possesses the largest ambient temperature electron Mobility , electron velocity, and Ballistic Length of any known semiconductor (7.8 m2V-1s-1), except possibly for Carbon Nanotubes . , InGaSb , and InAsSb . GROWTH METHODS InSb can be grown by solidifying a melt from the Liquid state, or Epitaxially by Liquid Phase Epitaxy , Hot Wall Epitaxy or Molecular Beam Epitaxy . It can also be grown from Organometallic compounds by MOVPE . DEVICE APPLICATIONS
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