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Aluminium Gallium Indium Phosphide




AlGaInP is used in manufacture of Light Emitting Diode s of high-brightness red, orange, green, and yellow color, to form the Heterostructure emitting light. It is also used to make Diode Laser s.

AlGaInP layer is often grown by Heteroepitaxy on Gallium Arsenide or Gallium Phosphide in order to form a Quantum Well structure.


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REFERENCES

  • Band structure parameters of quaternary phosphide semiconductor alloys investigated by magneto-optical spectroscopy, I J Griffin, D Wolverson, J J Davies, M Emam-Ismail, J Heffernan, A H Kean, S W Bland and G Duggan, Semicond. Sci. Technol. vol. 15 pp. 1030-1034 (2000)