Heterojunction Bipolar Transistor

MATERIALS

The principal difference between the BJT and HBT is the use of differing semiconductor materials for the emitter and base regions, creating a heterojunction. The effect is to limit the injection of holes into the base region, since the potential barrier in the valance band is so large. Unlike BJT technology, this allows high doping to be used in the base, creating higher electron mobility while maintaining gain. The efficiency of the device is measured by the Kroemer factor, after Herbert Kroemer who received a Nobel Prize for his work in this field in 2000.

Materials used for the substrate include silicon- Germanium alloys and Gallium Arsenide , while Aluminium Gallium Arsenide , Indium Phosphide and Indium Gallium Phosphide are used for the epitaxial layers. Wide- Bandgap semiconductors are especially promising, eg. Gallium Nitride and Indium Gallium Nitride .

FABRICATION

Due to the need to manufacture HBT devices with extremely thin base layers, Molecular Beam Epitaxy is principally employed. In addition to base, emitter and collector layers, highly doped layers are deposited either side of collector and emitter to facilitate an Ohmic Contact , which are placed on the contact layers after exposure by Photolithography .

LIMITS

A pseudomorphic heterojunction bipolar transistor developed at the University Of Illinois , built from Indium Phosphide and Indium Gallium Arsenide and designed with compositionally graded collector, base and emitter, was demonstrated to run at a speed of 710 gigahertz.

Besides being record breakers in terms of speed, HBTs made of InP/InGaAs are ideal for monolithic optoelectronic integrated circuits. The Bandgap of InGaAs fits for detection of 1.55μm- Wavelength signal used in optical communication systems. Among other HBT applications are mixed signal circuits such as analog-to-digital and digital-to-analog converters.

SEE ALSO

HEMT

EXTERNAL LINK

NCSR HBT

Information About

Heterojunction Bipolar Transistor