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A popular SOI technology is Silicon On Sapphire (SOS), used in special Rad-hard applications in Military and Aerospace .

SOI differs from generic CMOS in that its silicon junction is above an electrical insulator. The advantage is that this insulator reduces the Capacitance , meaning the transistor has less to charge-up before completing a switch, which results in reduced switching time. SOI devices are usually inherently Latchup resistant. Also, there is a reduction in transistor leakage current thereby making this fabrication technology an attractive choice for low power circuit design.

SOI wafers are produced by one of two main methods:

  • '' SIMOX '' - Separation by '''IM'''plantation of '''OX'''ygen - uses an oxygen Ion Beam Implantation process followed by high temperature annealing to create a buried SiO2 layer.

  • '' Smart Cut ''™ is another method developed by the French firm Soitec that bonds the oxidized surface of two wafers together and then splits most of the top wafer away along a band of implanted Hydrogen bubbles. The thin layer of silicon that is left behind is isolated from the substrate by what was originally the surface oxide layers.



USE IN INDUSTRY

As of 2005, SOI technology is being gradually adopted by digital Integrated Circuit manufacturers. In particular, Sony , Nintendo , and Microsoft plan to use it in production of their Next-generation video game consoles. It is important to note that the SOI based- Processors that are going into these machines are all manufactured by IBM with the exception of the Sony Playstation. Many PowerPC based systems from Apple Computer and high-end IBM servers have used SOI based microprocessors for some time. It should be noted that while Sony, AMD, and Chartered Semiconductor manufacture their own SOI-based technologies, each of these companies is partnered with IBM, which licenses the technology to them.


EXTERNAL LINKS

  • AMDboard - a site with extensive information regarding SOI technology


  • Soitec - The official website of Soitec