| Indium Gallium Arsenide |
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The indium content determines the two-dimensional Charge Carrier density. PROPERTIES The optical and mechanical properties of InGaAs can be varied by changing the ratio of In and Ga, InxGa1-xAs. The InGaAs device is normally grown on an Indium Phosphide (InP) substrate. In order to match the Lattice Constant of InP and avoid mechanical strain, In0.53Ga0.47As, this composition has a Cut Off Wavelength of 1.68 μm . By increasing the ratio of In further compared to As it is possible to extend the Cut Off Wavelength up to about 2.6 μm . In that case special measures have to be taken to avoid mechanical strain from differences in Lattice Constant s. APPLICATIONS HEMT devices using InGaAs channels are one of the fastest types of Transistor . InGaAs is also a popular material in Infrared Detector s. It is widely replacing Germanium as a detector material mainly due to lower Dark Current (internally generated current). It also has lower multiplication noise than germanium when used as the active multiplication layer of an Avalanche Photodiode . InGaAs can be used as a laser medium. Devices have been constructed operating at wavelengths of 905 nm, 980 nm, 1060 nm, and 1300 nm. InGaAs Quantum Dots on GaAs have also been studied as lasers. SEE ALSO Indium Phosphide , Indium Gallium Phosphide , Gallium Arsenide , Indium Arsenide . EXTERNAL LINKS Academic
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