| Igbt Transistor |
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The Insulated (sometimes called '''Isolated''') '''Gate Bipolar Transistor''' combines the simple gate drive characteristics of the MOSFET with the high current and low saturation voltage capability of Bipolar Transistor s by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. The IGBT is mainly used in switching power supplies and motor control applications. The IGBT is a recent invention. The "first-generation" devices of the 1980s and early '90s were relatively slow in switching, and prone to failure through such modes as Latchup and Secondary Breakdown . Second-generation devices were much improved, and the current third-generation ones are even better, with speed rivaling MOSFETs, and excellent ruggedness and tolerance of overloads. The extremely high pulse ratings of second- and third-generation devices also make them useful for generating large power pulses in areas like Particle and Plasma Physics , where they are starting to supersede older devices like Thyratron s and Triggered Spark Gaps . Their high pulse ratings, and low prices on the surplus market, also make them attractive to the high-voltage hobbyist for generating large amounts of high-frequency power to drive experiments like Tesla Coil s. Availability of affordable, reliable IGBTs is a key enabler for Electric Vehicle s and Hybrid Car s. Toyota 's second generation hybrid Prius has a 50 kW IGBT Inverter controlling two AC motor/generators connected to the DC battery pack. External links |
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