| Gunn Diode |
Article Index for Gunn |
Website Links For Gunn |
Information AboutGunn Diode |
| CATEGORIES ABOUT GUNN DIODE | |
| diodes | |
| microwave technology | |
| terahertz technology | |
|
A Gunn diode, also known as a '''transferred electron device''' ('''TED''') is a form of . The negative resistance, combined with the timing properties of the intermediate layer, allows construction of an RF Relaxation Oscillator simply by applying a suitable Direct Current through the device. The oscillation frequency is determined partly by the properties of the thin middle layer, but can be adjusted by external factors. Gunn diodes are therefore used to build oscillators in the 10 GHz and higher ( THz ) frequency range, where a Resonant Cavity is usually added to control frequency. The Resonator can be based on a Waveguide , Coaxial Cavity , YIG Resonator , etc. Tuning is done mechanically, by adjusting the parameters of the resonator, or in case of YIG resonators by electric current. Gallium Arsenide Gunn diodes are made for frequencies up to 200 GHz, Gallium Nitride materials can reach up to 3 Terahertz . EXTERNAL LINKS
|
|
|