| Aluminium Gallium Arsenide |
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Information AboutAluminium Gallium Arsenide |
| CATEGORIES ABOUT ALUMINIUM GALLIUM ARSENIDE | |
| arsenides | |
| aluminium compounds | |
| gallium compounds | |
| semiconductor materials | |
| iii-v compounds | |
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The bandgap varies between 1.42 EV (GaAs) and 2.16 eV (AlAs). For x < 0.4, the Bandgap Is Direct . The formula ''AlGaAs'' should be considered an abbreviated form of the above, rather than any particular ratio. Aluminium gallium arsenide is used as a barrier material in GaAs based heterostructure devices. The AlGaAs layer confines the electrons to a gallium arsenide region. An example of such a device is a quantum well infrared photodetector ( QWIP ). SEE ALSO EXTERNAL LINK |
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